Title :
Hundred MeV ion irradiation effect on dopant depth profiles in silicon
Author :
Neustroev, E.P. ; Antonova, I.V. ; Didyk, H.Yu. ; Dinu, N. ; Skuratov, V.A.
Author_Institution :
Inst. of Semicond. Phys., Novosibirsk, Russia
Abstract :
The effect of 430 MeV Kr and 614 MeV Xe ion irradiation on the dopant (Al, As, Sb, Ga, Bi) profiles in silicon crystals has been investigated. It has been found a dopant redistribution as a result of this irradiation and the most pronounced effect was seen for Sb and Bi dopants. The observed effect could be attributed to an enhanced diffusion of dopants due to damage structure introduced by high-energy ion irradiation (HEII) in ion track range
Keywords :
diffusion; doping profiles; elemental semiconductors; ion beam effects; silicon; 430 keV; 614 keV; Si; diffusion; dopant depth profile; high energy ion irradiation; ion track; silicon crystal; Annealing; Atomic measurements; Bismuth; Boron; Crystals; Furnaces; Implants; Ion implantation; Physics; Silicon;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.733832
