DocumentCode
2405855
Title
Hundred MeV ion irradiation effect on dopant depth profiles in silicon
Author
Neustroev, E.P. ; Antonova, I.V. ; Didyk, H.Yu. ; Dinu, N. ; Skuratov, V.A.
Author_Institution
Inst. of Semicond. Phys., Novosibirsk, Russia
Volume
2
fYear
1998
fDate
6-10 Oct 1998
Firstpage
641
Abstract
The effect of 430 MeV Kr and 614 MeV Xe ion irradiation on the dopant (Al, As, Sb, Ga, Bi) profiles in silicon crystals has been investigated. It has been found a dopant redistribution as a result of this irradiation and the most pronounced effect was seen for Sb and Bi dopants. The observed effect could be attributed to an enhanced diffusion of dopants due to damage structure introduced by high-energy ion irradiation (HEII) in ion track range
Keywords
diffusion; doping profiles; elemental semiconductors; ion beam effects; silicon; 430 keV; 614 keV; Si; diffusion; dopant depth profile; high energy ion irradiation; ion track; silicon crystal; Annealing; Atomic measurements; Bismuth; Boron; Crystals; Furnaces; Implants; Ion implantation; Physics; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location
Sinaia
Print_ISBN
0-7803-4432-4
Type
conf
DOI
10.1109/SMICND.1998.733832
Filename
733832
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