Title :
Raised S/D gate-all-around CMOS using MILC
Author :
Yin, Chunshan ; Chan, Philip C.H. ; Chan, Victor W.C.
Author_Institution :
Dept. of EEE, Hong Kong Univ. of Sci. & Technol., China
Abstract :
The double gate or Gate-All-Around MOSFET is a promising candidate to further stretch the CMOS scaling roadmap In this paper we present our preliminary work of a new high performance Gate-All-Around transistors (GAT). The device is fabricated on a bulk silicon wafer, and it can also be fabricated on any substrate or on the top of any device layers The channel of this GAT is silicon film recrystallized from amorphous silicon, using technique known as Metal-Induced-Lateral-Crystallization.
Keywords :
CMOS integrated circuits; MOSFET; amorphous semiconductors; crystallisation; elemental semiconductors; semiconductor growth; silicon; CMOS scaling roadmap; GAT; Gate-All-Around MOSFET; MILC; Metal-Induced-Lateral-Crystallization; Si; amorphous silicon; channel; double gate MOSFET; high performance transistors; raised S/D gate-all-around CMOS; silicon wafer; Amorphous semiconductors; CMOS integrated circuits; MOSFETs; Semiconductor growth; Silicon;
Conference_Titel :
SOI Conference, IEEE International 2002
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.2002.1044407
