DocumentCode
2405860
Title
Raised S/D gate-all-around CMOS using MILC
Author
Yin, Chunshan ; Chan, Philip C.H. ; Chan, Victor W.C.
Author_Institution
Dept. of EEE, Hong Kong Univ. of Sci. & Technol., China
fYear
2002
fDate
7-10 Oct 2002
Firstpage
39
Lastpage
40
Abstract
The double gate or Gate-All-Around MOSFET is a promising candidate to further stretch the CMOS scaling roadmap In this paper we present our preliminary work of a new high performance Gate-All-Around transistors (GAT). The device is fabricated on a bulk silicon wafer, and it can also be fabricated on any substrate or on the top of any device layers The channel of this GAT is silicon film recrystallized from amorphous silicon, using technique known as Metal-Induced-Lateral-Crystallization.
Keywords
CMOS integrated circuits; MOSFET; amorphous semiconductors; crystallisation; elemental semiconductors; semiconductor growth; silicon; CMOS scaling roadmap; GAT; Gate-All-Around MOSFET; MILC; Metal-Induced-Lateral-Crystallization; Si; amorphous silicon; channel; double gate MOSFET; high performance transistors; raised S/D gate-all-around CMOS; silicon wafer; Amorphous semiconductors; CMOS integrated circuits; MOSFETs; Semiconductor growth; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, IEEE International 2002
Print_ISBN
0-7803-7439-8
Type
conf
DOI
10.1109/SOI.2002.1044407
Filename
1044407
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