• DocumentCode
    2405877
  • Title

    Model of electron field emission from Si through SiO2

  • Author

    Filip, Valeriu ; Nicolaescu, D. ; Okuyama, F. ; Itoh, J.

  • Author_Institution
    Dept. of Environ. Technol., Nagoya Inst. of Technol., Japan
  • Volume
    2
  • fYear
    1998
  • fDate
    6-10 Oct 1998
  • Firstpage
    645
  • Abstract
    The field electron emission from Si occurring through a SiO2 layer is considered. The applied electric field may produce electron accumulations near the emitting site and a reduction of the effective emitting surface area. The effect is stimulated by the oxide thickness increase
  • Keywords
    electron field emission; elemental semiconductors; semiconductor-insulator boundaries; silicon; silicon compounds; Si; Si-SiO2; SiO2 layer; electron field emission; model; semiconductor-oxide interface; Boundary conditions; Effective mass; Electron emission; Impedance; Laboratories; Physics; Resonance; Silicon; Thickness control; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-4432-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1998.733833
  • Filename
    733833
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2405877