• DocumentCode
    2405892
  • Title

    Charge pumping study of hot-carrier induced degradation of sub-100nm partially depleted SOI MOSFETs

  • Author

    Chan, Jay ; Zhao, Eugene-Xuejun ; Sinha, Shankar P. ; Marathe, Amit

  • Author_Institution
    AMD, Sunnyvale, CA, USA
  • fYear
    2002
  • fDate
    7-10 Oct 2002
  • Firstpage
    43
  • Lastpage
    44
  • Abstract
    We studied the hot-carrier behavior of sub-100nm PD SOI MOSFETs at 25 and 100 °C under various conditions of stress. It was observed that VG=VD was the worst case and more sensitive to temperature variation.
  • Keywords
    MOSFET; elemental semiconductors; hot carriers; semiconductor device measurement; semiconductor device reliability; silicon; silicon-on-insulator; 100 C; 100 nm; 25 C; PD SOI MOSFETs; Si-SiO2; charge pumping study; hot-carrier induced degradation; partially depleted SOI MOSFETs; stress; temperature variation; Hot carriers; MOSFETs; Semiconductor device reliability; Silicon; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, IEEE International 2002
  • Print_ISBN
    0-7803-7439-8
  • Type

    conf

  • DOI
    10.1109/SOI.2002.1044409
  • Filename
    1044409
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2405892