Title :
Charge pumping study of hot-carrier induced degradation of sub-100nm partially depleted SOI MOSFETs
Author :
Chan, Jay ; Zhao, Eugene-Xuejun ; Sinha, Shankar P. ; Marathe, Amit
Author_Institution :
AMD, Sunnyvale, CA, USA
Abstract :
We studied the hot-carrier behavior of sub-100nm PD SOI MOSFETs at 25 and 100 °C under various conditions of stress. It was observed that VG=VD was the worst case and more sensitive to temperature variation.
Keywords :
MOSFET; elemental semiconductors; hot carriers; semiconductor device measurement; semiconductor device reliability; silicon; silicon-on-insulator; 100 C; 100 nm; 25 C; PD SOI MOSFETs; Si-SiO2; charge pumping study; hot-carrier induced degradation; partially depleted SOI MOSFETs; stress; temperature variation; Hot carriers; MOSFETs; Semiconductor device reliability; Silicon; Silicon on insulator technology;
Conference_Titel :
SOI Conference, IEEE International 2002
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.2002.1044409
