Fractal properties of heat treated metal-compound semiconductor structures

Author

Kovács, B. ; Dobos, L. ; Mojzes, I. ; Schuszter, M.

Author_Institution

Dept. of Electron. Technol., Tech. Univ. Budapest, Hungary

Volume

2

fYear

1998

fDate

6-10 Oct 1998

Firstpage

649

Abstract

The heat treatment of metallized Au(10 nm)/InP(100), Au(30 nm)/InP(100), Au(85 nm)/InP(100) structures were studied by in situ scanning electron microscopy combined with mass spectrometry. Correlation was found between the surface morphology and the volatile component loss caused by the material interactions taking place during the heat treatment. Earlier experiments proved that the surface morphology can be characterized by its fractal dimension. In this paper the dependence of the fractal dimension of the surface pattern on the heat treatment temperature and on the metal thickness is described

Keywords

III-V semiconductors; fractals; gold; heat treatment; indium compounds; mass spectra; metallisation; scanning electron microscopy; semiconductor-metal boundaries; surface structure; Au-InP; fractal dimension; heat treatment; mass spectrometry; metal-compound semiconductor structure; metallization; scanning electron microscopy; surface morphology; volatile component loss; Chemicals; Fractals; Heat treatment; Indium phosphide; Mass spectroscopy; Materials science and technology; Metallization; Surface morphology; Surface treatment; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International

Conference_Location

Sinaia

Print_ISBN

0-7803-4432-4

Type

conf

DOI

10.1109/SMICND.1998.733835

Filename

733835