Title :
Analytical model for a transient floating body voltage in PD-SOI MOSFETs
Author :
Yi, Jeong-Hyong ; Park, Young-June ; Min, Hong Shick
Author_Institution :
Sch. of EECS, Seoul Nat. Univ., South Korea
Abstract :
In this work, by introducing the concept of charge sharing, we present a new model for partially depleted SOI MOSFETs, in which the floating body voltage can be determined by using an analytical expression with only device parameters.
Keywords :
MOSFET; elemental semiconductors; semiconductor device models; silicon; silicon-on-insulator; PD-SOI MOSFETs; Si-SiO2; analytical model; charge sharing; device parameters; partially depleted SOI MOSFETs; transient floating body voltage; MOSFETs; Semiconductor device modeling; Silicon; Silicon on insulator technology;
Conference_Titel :
SOI Conference, IEEE International 2002
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.2002.1044412
