• DocumentCode
    2405947
  • Title

    Analytical model for a transient floating body voltage in PD-SOI MOSFETs

  • Author

    Yi, Jeong-Hyong ; Park, Young-June ; Min, Hong Shick

  • Author_Institution
    Sch. of EECS, Seoul Nat. Univ., South Korea
  • fYear
    2002
  • fDate
    7-10 Oct 2002
  • Firstpage
    53
  • Lastpage
    54
  • Abstract
    In this work, by introducing the concept of charge sharing, we present a new model for partially depleted SOI MOSFETs, in which the floating body voltage can be determined by using an analytical expression with only device parameters.
  • Keywords
    MOSFET; elemental semiconductors; semiconductor device models; silicon; silicon-on-insulator; PD-SOI MOSFETs; Si-SiO2; analytical model; charge sharing; device parameters; partially depleted SOI MOSFETs; transient floating body voltage; MOSFETs; Semiconductor device modeling; Silicon; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, IEEE International 2002
  • Print_ISBN
    0-7803-7439-8
  • Type

    conf

  • DOI
    10.1109/SOI.2002.1044412
  • Filename
    1044412
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2405947