Title :
A GaAs HBT programmable linear power amplifier
Author :
Gao, Huai ; Zhang, Haitao ; Wang, Rong ; Li, G.P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Irvine, CA, USA
fDate :
30 Oct.-2 Nov. 2005
Abstract :
A three-stage power amplifier with a novel programmable linearization input stage is proposed and designed. The input stage with dual feedback loops can predistort the input signal to compensate the gain compression and phase distortion attributed from the following stages. The power amplifier demonstrated a peak PAE of 62% at the output power of 30.5dBm operating at 1.75GHz to 1.95GHz. At 27dBm output power level the adjacent channel power rejection ratio (ACPR) is less than -44dBc at a 1.25MHz offset frequency.
Keywords :
III-V semiconductors; RC circuits; RLC circuits; bipolar analogue integrated circuits; gallium arsenide; heterojunction bipolar transistors; power amplifiers; 1.25 GHz; 1.75 to 1.95 GHz; GaAs; HBT; RC shunt feedback; RL series feedback; adjacent channel power rejection ratio; gain compression; phase distortion; predistortion; programmable linear power amplifier; Feedback loop; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Linearity; Linearization techniques; Phase distortion; Power amplifiers; Power generation; Predistortion;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN :
0-7803-9250-7
DOI :
10.1109/CSICS.2005.1531795
