A GaAs HBT programmable linear power amplifier

Author

Gao, Huai ; Zhang, Haitao ; Wang, Rong ; Li, G.P.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Irvine, CA, USA

fYear

2005

fDate

30 Oct.-2 Nov. 2005

Abstract

A three-stage power amplifier with a novel programmable linearization input stage is proposed and designed. The input stage with dual feedback loops can predistort the input signal to compensate the gain compression and phase distortion attributed from the following stages. The power amplifier demonstrated a peak PAE of 62% at the output power of 30.5dBm operating at 1.75GHz to 1.95GHz. At 27dBm output power level the adjacent channel power rejection ratio (ACPR) is less than -44dBc at a 1.25MHz offset frequency.

Keywords

III-V semiconductors; RC circuits; RLC circuits; bipolar analogue integrated circuits; gallium arsenide; heterojunction bipolar transistors; power amplifiers; 1.25 GHz; 1.75 to 1.95 GHz; GaAs; HBT; RC shunt feedback; RL series feedback; adjacent channel power rejection ratio; gain compression; phase distortion; predistortion; programmable linear power amplifier; Feedback loop; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Linearity; Linearization techniques; Phase distortion; Power amplifiers; Power generation; Predistortion;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE

Print_ISBN

0-7803-9250-7

Type

conf

DOI

10.1109/CSICS.2005.1531795

Filename

1531795