DocumentCode
2405985
Title
High-efficiency class-E power amplifier using field-plated GaN HEMTs
Author
Xu, Hongtao ; Gao, Steven ; Heikman, Sten ; Mishra, Umesh K. ; York, Robert A.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear
2005
fDate
30 Oct.-2 Nov. 2005
Abstract
This paper presents class-E microwave monolithic integrated circuit (MMIC) power amplifiers at 2.0 GHz, which is based on field-plated GaN HEMT technology. The 2-stage power amplifier consists of a class-F driver stage and a class-E power stage. The circuit schematic, layout and fabrication are described. The amplifier achieves an output power of 37.5dBm into a 50H load, a power added efficiency (PAE) of 50%, and a gain of 18.2dB. A power density of 5.6W/mm is achieved.
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; wide band gap semiconductors; 18.2 dB; 2 GHz; GaN; class-E power amplifier; field-plated GaN HEMT; microwave monolithic integrated circuit; microwave power amplifiers; power added efficiency; Gallium nitride; HEMTs; High power amplifiers; Integrated circuit technology; MMICs; MODFETs; Microwave amplifiers; Microwave technology; Monolithic integrated circuits; Power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN
0-7803-9250-7
Type
conf
DOI
10.1109/CSICS.2005.1531797
Filename
1531797
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