Title :
Field-plated GaN HEMTs and amplifiers
Author :
Wu, Y.F. ; Saxler, A. ; Moore, M. ; Wisleder, T. ; Mishra, U.K. ; Parikh, P.
Author_Institution :
CREE Santa Barbara Technol. Center, Goleta, CA, USA
fDate :
30 Oct.-2 Nov. 2005
Abstract :
Field-plates remarkably enhanced large-signal performance of GaN HEMTs by reducing trapping effect and increasing breakdown voltages. Power densities exceeding 30W/mm at 4GHz were demonstrated with gate-connected field plates. Further development of source-connected field pates boosted large-signal gain by 5-7dB, while maintaining the benefit of the field plates. Short-channel GaN HEMTs with field plates also showed promise at millimeter-wave bands. Amplifiers with 1.08-mm-wide device periphery generated 5W at 35GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; gallium compounds; millimetre wave amplifiers; wide band gap semiconductors; 1.08 mm; 35 GHz; 4 GHz; 5 W; 5 to 7 dB; GaN; HEMT; amplifiers; breakdown voltages; millimeterwave bands; power densities; trapping effect; Capacitance; Dielectric materials; Frequency; Gallium nitride; HEMTs; MODFETs; Millimeter wave technology; Power generation; Silicon; Voltage;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN :
0-7803-9250-7
DOI :
10.1109/CSICS.2005.1531800
