Title :
Improved SOI image sensor design based on backside illumination on Silicon-On-Sapphire (SOS) substrate
Author :
Shen, Chao ; Xu, Chen ; Huang, R. ; Ko, Ping K. ; Chan, Mansun
Author_Institution :
Dept. of EEE, Hong Kong Univ. of Sci. & Technol., China
Abstract :
In this paper, the optical response of a MOS phototransistor on SOS substrate operating in lateral bipolar transistor (LBT) mode using backside illumination is studied. Besides low voltage operation capability and better isolation provided by SOI, CMOS based image sensors using backside sensing have further advantage of higher fill factor without metal blocking and smaller interference due to front oxide thickness non-uniformity. The advantages of using backside sensing are experimentally demonstrated.
Keywords :
CMOS image sensors; phototransistors; silicon-on-insulator; Al2O3; CMOS based image sensors; MOS phototransistor; SOC applications; SOI image sensor design; SOS substrate; Si; backside illumination; backside sensing; front oxide thickness nonuniformity; higher fill factor; lateral bipolar transistor mode; low voltage operation capability; optical response; Phototransistors; Silicon on insulator technology;
Conference_Titel :
SOI Conference, IEEE International 2002
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.2002.1044423
