• DocumentCode
    2406124
  • Title

    Improved SOI image sensor design based on backside illumination on Silicon-On-Sapphire (SOS) substrate

  • Author

    Shen, Chao ; Xu, Chen ; Huang, R. ; Ko, Ping K. ; Chan, Mansun

  • Author_Institution
    Dept. of EEE, Hong Kong Univ. of Sci. & Technol., China
  • fYear
    2002
  • fDate
    7-10 Oct 2002
  • Firstpage
    73
  • Lastpage
    74
  • Abstract
    In this paper, the optical response of a MOS phototransistor on SOS substrate operating in lateral bipolar transistor (LBT) mode using backside illumination is studied. Besides low voltage operation capability and better isolation provided by SOI, CMOS based image sensors using backside sensing have further advantage of higher fill factor without metal blocking and smaller interference due to front oxide thickness non-uniformity. The advantages of using backside sensing are experimentally demonstrated.
  • Keywords
    CMOS image sensors; phototransistors; silicon-on-insulator; Al2O3; CMOS based image sensors; MOS phototransistor; SOC applications; SOI image sensor design; SOS substrate; Si; backside illumination; backside sensing; front oxide thickness nonuniformity; higher fill factor; lateral bipolar transistor mode; low voltage operation capability; optical response; Phototransistors; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, IEEE International 2002
  • Print_ISBN
    0-7803-7439-8
  • Type

    conf

  • DOI
    10.1109/SOI.2002.1044423
  • Filename
    1044423
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2406124