DocumentCode :
2406180
Title :
Development trends regarding improvements of porcelain insulators
Author :
Axelsson, Robert ; Johansson, Thomas
Author_Institution :
Ifo Ceramics AB, Bromolla, Sweden
Volume :
1
fYear :
1998
fDate :
25-28 Oct 1998
Firstpage :
60
Abstract :
Design of high voltage insulators has always been restricted by a limited choice of materials and closely linked to development of manufacturing processes. Introducing new designs has often been complicated. Time required for engineering, preparation and new tools, has made uniformity desirable, sometimes generating rigid obedience of recommendations. The insulator of porcelain, predominant for more than a century, has been exposed to newborn interests in design and production. This has brought forth the refined conception of contemporary porcelain insulators, CPI. Recently two improvements have received special attention. Isostatic process. Although used to produce high voltage insulators since the 1960´s, it endured until this decade before the complete range of advantages was adopted. Short lead-time, tight tolerances and flexible design have been exploited lately. K-value, the correct calculation of pollution performance. Creepage distance, the fundamental parameter, is easily and frequently calculated and standardized. The recognized fact, that surface resistance for currents are depending on form, not distance, has gone largely unnoticed. The complicity of a formula including circumference and length along varying profiles explains the prevailing status. However, up to date engineering can comprehend calculations impossible in the past. Pollution performance can now be optimized without sacrificing conventional recommendations
Keywords :
insulator contamination; porcelain insulators; K-value; contemporary porcelain insulator; creepage distance; high voltage insulator; isostatic process; manufacturing process; pollution; porcelain insulator; surface resistance; Insulation; Manufacturing processes; Pediatrics; Pollution; Porcelain; Process design; Production; Surface contamination; Surface resistance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1998. Annual Report. Conference on
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-5035-9
Type :
conf
DOI :
10.1109/CEIDP.1998.733850
Filename :
733850
Link To Document :
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