Emerging floating-body effects in advanced partially-depleted SOI devices

In recent technologies, the aggressive scaling of the gate oxide thickness leads to significant increase in gate currents. In case of SOI technology, the gate-to-body component has to be considered carefully, since it strongly impacts the history effects In this paper, we study its effect on partially-depleted floating-body device. behaviour. Generation and recombination transients are analyzed by correlating drain current and body potential measurements performed on body contacted devices. Impact on history effect is also studied, considering not only first and second switches, but the complete simulation until steady-state.