Title :
MMIC-oscillator designs for ultra low phase noise
Author :
Zirath, Herbert ; Jacobsson, Harald ; Bao, M. ; Ferndahl, Mattias ; Kozhuharov, Rumen
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
30 Oct.-2 Nov. 2005
Abstract :
Various balanced VCO-topologies like cross-connected (negative gm), coupled cross-connected, coupled Colpitt and Clapp oscillators, all with a fully integrated tank are reported. In this study, different MMIC/RFIC technologies such as SiGe HBT, InGaP-GaAs-HBT, PHEMT, MHEMT, and CMOS are represented and parameters such as phase-noise, output power, dc-power consumption, and tuning range are compared. All oscillators are designed for low phase noise. Low phase noise can be achieved by CMOS, PHEMT and MHEMT technologies although SiGe and InGaP-GaAs HBT based oscillators have demonstrated the lowest phase noise. Both fundamental and second harmonic VCOs are represented in the evaluation.
Keywords :
CMOS integrated circuits; HEMT integrated circuits; MMIC oscillators; gallium arsenide; heterojunction bipolar transistors; indium compounds; phase noise; silicon compounds; voltage-controlled oscillators; CMOS technologies; InGaP-GaAs; MHEMT technologies; PHEMT technologies; SiGe; heterojunction bipolar transistor based oscillators; low phase noise; monolithic microwave integrated circuits; power consumption; tuning range; voltage controlled oscillators; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; MMICs; Oscillators; PHEMTs; Phase noise; Radiofrequency integrated circuits; Silicon germanium; mHEMTs;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN :
0-7803-9250-7
DOI :
10.1109/CSICS.2005.1531813