Title :
A comparative approach of low frequency noise in 0.25 and 0.12 μm Partially and Fully Depleted SOI N-MOSFETs
Author :
Dieudonné, F. ; Haendler, S. ; Jomaah, J. ; Balestra, F.
Author_Institution :
Inst. of Microelectron., Electromagnetism, Photonics, ENSERG, Grenoble, France
Abstract :
Low frequency noise (LFN) in N-channel Partially Depleted (PD) and Fully Depleted (FD) SOI devices fabricated on Unibond substrates is investigated for 0.25 and 0.12 μm SOI CMOS technology nodes. LFN is analyzed in both linear and saturation regimes. We draw some comparisons between noise levels and kink-related excess noise for both technologies.
Keywords :
CMOS integrated circuits; MOSFET; semiconductor device noise; silicon-on-insulator; 0.12 micron; 0.25 micron; SOI CMOS technology nodes; Unibond substrates; excess noise; fully depleted SOI N-MOSFETs; linear regime; low frequency noise; noise levels; partially depleted SOI N-MOSFETs; saturation regime; CMOS integrated circuits; MOSFETs; Semiconductor device noise; Silicon on insulator technology;
Conference_Titel :
SOI Conference, IEEE International 2002
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.2002.1044437
