DocumentCode
2406351
Title
A comparative approach of low frequency noise in 0.25 and 0.12 μm Partially and Fully Depleted SOI N-MOSFETs
Author
Dieudonné, F. ; Haendler, S. ; Jomaah, J. ; Balestra, F.
Author_Institution
Inst. of Microelectron., Electromagnetism, Photonics, ENSERG, Grenoble, France
fYear
2002
fDate
7-10 Oct 2002
Firstpage
105
Lastpage
106
Abstract
Low frequency noise (LFN) in N-channel Partially Depleted (PD) and Fully Depleted (FD) SOI devices fabricated on Unibond substrates is investigated for 0.25 and 0.12 μm SOI CMOS technology nodes. LFN is analyzed in both linear and saturation regimes. We draw some comparisons between noise levels and kink-related excess noise for both technologies.
Keywords
CMOS integrated circuits; MOSFET; semiconductor device noise; silicon-on-insulator; 0.12 micron; 0.25 micron; SOI CMOS technology nodes; Unibond substrates; excess noise; fully depleted SOI N-MOSFETs; linear regime; low frequency noise; noise levels; partially depleted SOI N-MOSFETs; saturation regime; CMOS integrated circuits; MOSFETs; Semiconductor device noise; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, IEEE International 2002
Print_ISBN
0-7803-7439-8
Type
conf
DOI
10.1109/SOI.2002.1044437
Filename
1044437
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