Title :
300 mm Ultra-Thin Advantox™ MLD SIMOX wafers manufactured using i2000 oxygen implanter
Author :
Blake, J. ; Dempsey, K. ; Dolan, R. ; Erokhin, Y. ; Powell, P. ; Richards, S.
Author_Institution :
Ibis Technol. Corp., Danvers, MA, USA
Abstract :
The first commercial 300 mm Ultra-Thin Advantox-MLD SIMOX wafers have been manufactured by Ibis Technology. Key characteristics of the wafers meet the requirements of advanced IC technologies based on PD of FD CMOS device designs. Newly introduced 300 mm i2000 SIMOX implanter enables volume manufacturing of high quality 300 mm SIMOX wafers at sub-$1000 wafer price target for high volume shipments.
Keywords :
SIMOX; integrated circuit manufacture; ion implantation; semiconductor device manufacture; 300 mm; IC manufacture; SIMOX; Si-SiO; ion implanter; ultra thin wafers; Integrated circuit manufacture; Ion implantation; SIMOX; Semiconductor device manufacture;
Conference_Titel :
SOI Conference, IEEE International 2002
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.2002.1044439
