• DocumentCode
    2406383
  • Title

    300 mm Ultra-Thin Advantox™ MLD SIMOX wafers manufactured using i2000 oxygen implanter

  • Author

    Blake, J. ; Dempsey, K. ; Dolan, R. ; Erokhin, Y. ; Powell, P. ; Richards, S.

  • Author_Institution
    Ibis Technol. Corp., Danvers, MA, USA
  • fYear
    2002
  • fDate
    7-10 Oct 2002
  • Firstpage
    109
  • Lastpage
    110
  • Abstract
    The first commercial 300 mm Ultra-Thin Advantox-MLD SIMOX wafers have been manufactured by Ibis Technology. Key characteristics of the wafers meet the requirements of advanced IC technologies based on PD of FD CMOS device designs. Newly introduced 300 mm i2000 SIMOX implanter enables volume manufacturing of high quality 300 mm SIMOX wafers at sub-$1000 wafer price target for high volume shipments.
  • Keywords
    SIMOX; integrated circuit manufacture; ion implantation; semiconductor device manufacture; 300 mm; IC manufacture; SIMOX; Si-SiO; ion implanter; ultra thin wafers; Integrated circuit manufacture; Ion implantation; SIMOX; Semiconductor device manufacture;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, IEEE International 2002
  • Print_ISBN
    0-7803-7439-8
  • Type

    conf

  • DOI
    10.1109/SOI.2002.1044439
  • Filename
    1044439
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2406383