Impact of high-κ dielectrics on undoped double-gate MOSFET scaling

The paper analyzes in a concerted manner both SCEs and gate tunneling in undoped symmetric DG MOSFETs with candidate high-κ dielectrics that currently receive close attention. To this end, an analytical threshold rolloff (OVTH) model with high-κ dielectrics is proposed that gives close agreement to published numerical simulations. The authors estimate the minimum thickness of the dielectrics under study limited by gate direct tunneling current. They comprehensively assess the impact of high-κ dielectrics on scalability of DG MOSFETs.