Title :
An indium phosphide X-band class-E power MMIC with 40% bandwidth
Author :
Watson, P. ; Quach, T. ; Axtel, H. ; Gutierrez-Aitken, A. ; Kaneshiro, E. ; Lee, W. ; Mattamana, A. ; Oki, A. ; Orlando, P. ; Patel, V. ; Sawdai, D.
Author_Institution :
Air Force Res. Lab., Sensors Directorate, Wright-Patterson, OH, USA
fDate :
30 Oct.-2 Nov. 2005
Abstract :
A broadband, high efficiency, X-band power amplifier is presented in this paper. The single-stage amplifier is based on indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. In order to obtain high efficiency operation, a switch mode, class-E amplifier topology was selected. Special attention has been paid to providing the required fundamental matching conditions, as well as appropriate harmonic terminations, over the frequency band of interest. As a result, the amplifier obtained a bandwidth of 40%, with 45-60% PAE, 19-21.5dBm Pout, and 9-11.5dB large-signal gain at X-band. To the best of our knowledge, this circuit demonstrates the widest bandwidth for a class-E amplifier at X-band.
Keywords :
III-V semiconductors; MMIC power amplifiers; bipolar MMIC; indium compounds; network topology; power integrated circuits; switched networks; wideband amplifiers; InP; X-band class-E power MMIC; broadband X-band power amplifier; double heterojunction bipolar transistor technology; indium phosphide material; single-stage amplifier; switch mode class-E amplifier topology; Bandwidth; Broadband amplifiers; DH-HEMTs; Double heterojunction bipolar transistors; High power amplifiers; Indium phosphide; MMICs; Operational amplifiers; Switches; Topology;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN :
0-7803-9250-7
DOI :
10.1109/CSICS.2005.1531819
