DocumentCode
2406505
Title
Ka-band MMIC high power amplifier (4W at 30GHz) with record compact size
Author
Kong, Kris Keon-Shik ; Nguyen, Bruce ; Nayak, Sabyasachi ; Kao, Ming-Yih
Author_Institution
TriQuint Semicond., Richardson, TX, USA
fYear
2005
fDate
30 Oct.-2 Nov. 2005
Abstract
We report a compact and efficient Ka-band high power amplifier with output power of over 4W at 30GHz and record compact area of 8.63mm2 in a Ka-band high power amplifier (HPA) class. The bias capacitors (∼80pF) are included inside the MMIC so that it reduces the assembly cost in the package or module. We employed a dual-recessed 0.15μm power pHEMT production process and 2mil-substrate technology to achieve high output power with high efficiency and compact design. The output power (CW measurement) is 36.2dBm, and, the gain, 22.5dB, at 30GHz. These results set the benchmark of CW output power per millimeter square area for the reported performance of Ka-band HPA MMICs.
Keywords
HEMT integrated circuits; MMIC power amplifiers; capacitors; field effect MMIC; power integrated circuits; 0.15 micron; 2 mil; 22.5 dB; 30 GHz; 4 W; Ka-band MMIC high power amplifier; bias capacitors; dual-recessed power pHEMT process; Assembly; Capacitors; Costs; High power amplifiers; MMICs; PHEMTs; Packaging; Power amplifiers; Power generation; Production;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN
0-7803-9250-7
Type
conf
DOI
10.1109/CSICS.2005.1531822
Filename
1531822
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