Title :
Design, performance and application of high voltage GaAs FETs
Author_Institution :
Freescale Semicond., Tempe, AZ, USA
fDate :
30 Oct.-2 Nov. 2005
Abstract :
Since the early 1970s, power GaAs FETs have seen wide spread usage in the vast majority of microwave communication systems. Until recently, most of these devices operated at drain voltages ranging from 8-12 Volts. Advances in process and epitaxial technology have enabled the operating voltage to be pushed to 26 Volts. This permits much higher power densities, which simplifies the design of high power discrete transistors. These new high voltage GaAs FETs now compete with LDMOS for cellular infrastructure and WiMAX (801.16) applications. This paper reviews the state of the art for high voltage FET technologies in terms of design, process technology and application.
Keywords :
III-V semiconductors; gallium arsenide; microwave field effect transistors; microwave power transistors; power field effect transistors; 26 V; 8 to 12 V; GaAs; WiMAX technology; high power discrete transistors; high voltage FET devices; microwave communication systems; Breakdown voltage; Digital modulation; Electric breakdown; Gallium arsenide; Microwave FETs; Microwave communication; Microwave transistors; Numerical simulation; Process design; WiMAX;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN :
0-7803-9250-7
DOI :
10.1109/CSICS.2005.1531825
