DocumentCode
2406594
Title
Microwave frequency tripling utilizing active devices
Author
Mima, J.P. ; Branner, G.R.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
Volume
2
fYear
1999
fDate
1999
Firstpage
1048
Abstract
An analysis of microwave frequency tripling is presented in this paper. Different embedding networks, biasing conditions and power levels for optimum performance of a PHEMT transistor are evaluated. It is shown that conversion gain is optimized for a specific combination of embedding networks, biasing conditions and input power levels. The design developed provides, to the best of the authors´ knowledge, the best tripler conversion gain yet predicted
Keywords
HEMT circuits; circuit optimisation; equivalent circuits; frequency multipliers; microwave field effect transistors; microwave frequency convertors; nonlinear network analysis; nonlinear network synthesis; PHEMT; active devices; biasing conditions; conversion gain optimization; embedding networks; frequency tripler; microwave frequency tripling; optimum performance; power levels; pseudomorphic HEMT; Electron mobility; Frequency conversion; Gallium arsenide; HEMTs; Microstrip; Microwave devices; Microwave frequencies; Microwave transistors; PHEMTs; Virtual manufacturing;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1999. 42nd Midwest Symposium on
Conference_Location
Las Cruces, NM
Print_ISBN
0-7803-5491-5
Type
conf
DOI
10.1109/MWSCAS.1999.867816
Filename
867816
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