• DocumentCode
    2406637
  • Title

    Density gradient transport model for the simulations of ultrathin, ultrashort SOI under non-equilibrium conditions

  • Author

    Lyumkis, E. ; Mickevicius, R. ; Penzin, O. ; Polsky, B. ; El Sayed, K. ; Wettstein, A. ; Fichtner, W.

  • Author_Institution
    Integrated Syst. Eng. Inc, San Jose, CA, USA
  • fYear
    2002
  • fDate
    7-10 Oct 2002
  • Firstpage
    143
  • Lastpage
    144
  • Abstract
    We report the first results of numerical simulation of nanoscale SOI structures under highly non-equilibrium conditions. The simulations are performed with the Density Gradient (DG) transport model.
  • Keywords
    nanotechnology; semiconductor device models; silicon-on-insulator; density gradient transport model; fully depleted double gated SOI structures; highly nonequilibrium conditions; nanoscale SOI structures; numerical simulation; ultrathin ultrashort SOI; Nanotechnology; Semiconductor device modeling; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, IEEE International 2002
  • Print_ISBN
    0-7803-7439-8
  • Type

    conf

  • DOI
    10.1109/SOI.2002.1044453
  • Filename
    1044453
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2406637