DocumentCode
2406696
Title
90nm SOI-CMOS of 150GHz fmax and 0.8dB NFmin @6GHz for SOC
Author
Vanmackelberg, M. ; Boret, S. ; Gloria, D. ; Rozeau, O. ; Gwoziecki, R. ; Raynaud, C. ; Lepilliet, S. ; Dambrine, G.
Author_Institution
IEMN, Villeneuve d´´Ascq, France
fYear
2002
fDate
7-10 Oct 2002
Firstpage
153
Lastpage
154
Abstract
Recently, CMOS devices with 150 GHz fmax have been reported with a 0.18 μm bulk CMOS technology. This paper describes a complete high frequency characterization of MOSFET devices obtained with a 0.13 μm partially-depleted SOI technology, including for the first time microwave noise parameters on 90 nm SOI devices. A high fmax of 150 GHz and a low minimum noise figure of 0.8 dB with an associated gain of 16 dB @ 6 GHz have been obtained @1.2V under low power consumption (7mW).
Keywords
CMOS integrated circuits; MOSFET; semiconductor device noise; silicon-on-insulator; system-on-chip; 150 GHz; 6 GHz; 90 nm; MOSFET; SOI-CMOS; bulk CMOS technology; high frequency characterization; microwave noise parameters; minimum noise figure; partially-depleted SOI technology; system-on-a-chip; CMOS integrated circuits; MOSFETs; Semiconductor device noise; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, IEEE International 2002
Print_ISBN
0-7803-7439-8
Type
conf
DOI
10.1109/SOI.2002.1044456
Filename
1044456
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