DocumentCode
2406765
Title
Influence of HALO implantation on analog performance and comparison between bulk, partially-depleted and fully-depleted MOSFETs
Author
Vancaillie, L. ; Kilchytska, V. ; Levacq, D. ; Adriaensen, Steven ; van Meer, H. ; De Meyer, K. ; Torrese, G. ; Raskin, Jean-Pierre ; Flandre, Denis
Author_Institution
Lab. de Microelectron., Univ. Catholique de Louvain, Belgium
fYear
2002
fDate
7-10 Oct 2002
Firstpage
161
Lastpage
162
Abstract
The influence of HALO implantation on analog device characteristics has been studied and compared for bulk, PD and FD SOI MOSFETs. It has been shown that whereas HALO implantation is needed for base-band applications preferably using longer channel, it has a detrimental effect for high-speed applications using minimum channel length transistors in strong inversion.
Keywords
MOSFET; ion implantation; silicon-on-insulator; HALO implantation; analog performance; base-band applications; bulk MOSFET; channel lengths; fully-depleted MOSFET; inversion regimes; kink effects; partially-depleted MOSFET; Ion implantation; MOSFETs; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, IEEE International 2002
Print_ISBN
0-7803-7439-8
Type
conf
DOI
10.1109/SOI.2002.1044459
Filename
1044459
Link To Document