Design methodology and applications of SiGe BiCMOS cascode opamps with up to 37-GHz unity gain bandwidth

Author

Voinigescu, Sorin P. ; Beerkens, Rudy ; Dickson, Timothy O. ; Chalvatzis, Theodoros

Author_Institution

Dept. of ECE, Toronto Univ., Ont., Canada

fYear

2005

fDate

30 Oct.-2 Nov. 2005

Abstract

A new technique to design highly stable operational amplifiers with maximum unity gain bandwidth, UGB, is developed. It relies on biasing MOSFETs at the peak f_MAX current density. Several opamps, based on MOS-HBT SiGe BiCMOS cascodes, were designed and fabricated with UGB as high as 37 GHz. This record bandwidth is achieved with active p-MOSFET loads. A 1.3-GHz bandpass filter was implemented using two fully differential opamps with common-mode-feedback.

Keywords

BiCMOS analogue integrated circuits; band-pass filters; cascade networks; differential amplifiers; integrated circuit design; operational amplifiers; silicon compounds; 1.3 GHz; 37 GHz; BiCMOS cascode opamps; MOS-HBT BiCMOS cascodes; SiGe; active p-MOSFET load; bandpass filters; common-mode-feedback; differential opamps; operational amplifiers; unity-gain bandwidth; Bandwidth; BiCMOS integrated circuits; Current density; Design methodology; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; MOSFET circuits; Operational amplifiers; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE

Print_ISBN

0-7803-9250-7

Type

conf

DOI

10.1109/CSICS.2005.1531841

Filename

1531841