DocumentCode
2406889
Title
Soft reverse recovery power diodes diffused with iridium
Author
Benda, V. ; Cernik, M. ; Stepkova, D.
Author_Institution
Czech Tech. Univ., Prague, Czech Republic
fYear
1996
fDate
23-25 Sept. 1996
Firstpage
65
Lastpage
68
Abstract
It is shown that iridium diffusion can be used as an alternative technique for fabrication of diodes with suitable carrier lifetime gradient in the base, resulting in relatively soft reverse recovery characteristics.
Keywords
carrier lifetime; diffusion; elemental semiconductors; iridium; power semiconductor diodes; power semiconductor switches; recovery; semiconductor doping; silicon; Ir diffusion; Si:Ir; carrier lifetime gradient; forward voltage drop; high power fast switching; reverse recovery current; soft reverse recovery power diodes;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics and Variable Speed Drives, 1996. Sixth International Conference on (Conf. Publ. No. 429)
ISSN
0537-9989
Print_ISBN
0-85296-665-2
Type
conf
DOI
10.1049/cp:19960889
Filename
708304
Link To Document