DocumentCode :
2406904
Title :
Nonlinear analytical model of the MRC (MOS resistive circuit)
Author :
Vidal, Eva ; Martinez, Herminio ; Alarcón, Eduard ; Poveda, Albert
Author_Institution :
Dept. of Electron. Eng., Univ. Politecnica de Catalunya, Barcelona, Spain
Volume :
2
fYear :
1999
fDate :
1999
Firstpage :
1122
Abstract :
We analyze the significant departures between the predicted behavior and the actual performance of MOS Resistive Circuit cells (MRC) due to mobility degradation. These effects are mainly a difference in the value of the resistance implemented, and a nonlinear behavior. A model including these effects is proposed and shown to work through an example
Keywords :
CMOS analogue integrated circuits; SPICE; continuous time filters; integrated circuit modelling; BSIM model; HSPICE; MOS resistive circuit; circuit performance; continuous time filters; differential resistor; inverting amplifier; mobility degradation; nonlinear analytical model; Analytical models; Circuit simulation; Degradation; Filters; Immune system; MOSFETs; Performance analysis; Predictive models; Resistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1999. 42nd Midwest Symposium on
Conference_Location :
Las Cruces, NM
Print_ISBN :
0-7803-5491-5
Type :
conf
DOI :
10.1109/MWSCAS.1999.867834
Filename :
867834
Link To Document :
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