Fabrication of ordered metal nano-particles on a quantum well structure

Author

Tung, K.H. ; Xiang, N.

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore

fYear

2010

fDate

14-16 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

We present a cost effective non-lithographic approach to fabricate metal nano-particles on an In_0.2Ga_0.8As quantum well (QW) structure. A highly ordered nano-hole array honeycomb structure is created using anodic oxidation of aluminium (Al). This structure provides a template for deposition of metal from which further processing yields metal nano-particles on a QW structure. We will compare how different types and combinations of metal nano-particles will affect photoluminescence (PL) emissions.

Keywords

III-V semiconductors; anodisation; etching; gallium arsenide; honeycomb structures; indium compounds; nanofabrication; nanoparticles; nickel; photoluminescence; self-assembly; semiconductor quantum wells; silver; surface plasmon resonance; Ag-Ni; In_0.2Ga_0.8As; LSPR; QW structure; anodic oxidation; highly ordered nanohole array honeycomb structure; localized surface plasmon resonance; metal dot array; metal nanoparticles; nonlithographic wet-etching approach; photoluminescence; quantum well structure; self-assembly; Gallium arsenide; Gold; Light emitting diodes; Nickel; Optical surface waves; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics Global Conference (PGC), 2010

Conference_Location

Singapore

Print_ISBN

978-1-4244-9882-6

Type

conf

DOI

10.1109/PGC.2010.5706083

Filename

5706083