Title :
A low power, high performance SiGe BiCMOS 802.1 6e dual conversion transceiver IC
Author :
Locher, M. ; Kuenen, J. ; Daanen, A. ; Visser, H. ; Essink, B. ; Vervoort, P.P. ; Charlon, O. ; Landesman, A. ; Kohlschütter, U.
Author_Institution :
NXP Semiconductors, Nijmegen
Abstract :
This paper describes a low power, high performance double conversion WiBro/WiMAX 802.16e radio transceiver optimized for mobile applications and coexistence with on-board cellular and WLAN/Bluetooth systems. It is fabricated in a SiGe BiCMOS process and achieves a receiver NF of less than 2.5 dB at an operation frequency of 2.35 GHz. The transmit gain can be digitally tuned over a 75 dB range. The transceiver consumes 125/135 mA at a 2.8 V supply in OFDMA Rx/Tx modes respectively
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; OFDM modulation; UHF integrated circuits; WiMax; broadband networks; frequency division multiple access; radio access networks; transceivers; 125 to 135 mA; 2.35 GHz; 2.8 V; 802.16e; OFDMA Rx-Tx mode; SiGe; SiGe BiCMOS process; WLAN-Bluetooth system; WiBro-WiMAX; digital tuning; dual conversion transceiver IC; frequency division multiple access; mobile application; on-board cellular system; orthogonal frequency division multiplexing; Application specific integrated circuits; BiCMOS integrated circuits; Bluetooth; Germanium silicon alloys; Noise measurement; Radio transceivers; Receivers; Silicon germanium; WiMAX; Wireless LAN;
Conference_Titel :
Mobile WiMAX Symposium, 2007. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
1-4244-0957-8
DOI :
10.1109/WIMAX.2007.348701
