DocumentCode :
2406981
Title :
Nova Cut™ process: fabrication of silicon on insulator materials
Author :
Lin, Jason T S ; Peng, James ; Lee, T.-H.
Author_Institution :
John Wolf Int. Inc., Taipei, Taiwan
fYear :
2002
fDate :
7-10 Oct 2002
Firstpage :
189
Lastpage :
191
Abstract :
A layer transferring technique, so-called "Smart Cut" or "Ion Cut" process, employing wafer bonding and a thermally implanted ion-assist layer splitting method has been successfully developed to manufacture bonding-based SOI materials. This paper demonstrates a non-thermal approach to achieve the same layer splitting and transferring effect: the use of a microwave hybrid instead of the use of heating in the implanted ion-assist layer transfer method for the fabrication of SOI materials. One of the interesting effects in the process with microwave energy is that certain physical and chemical properties of materials can be altered under microwave irradiation to create several desired effects not observed in conventional processes.
Keywords :
elemental semiconductors; microwave heating; silicon; silicon-on-insulator; wafer bonding; Nova Cut process; SOI materials; Si-SiO2; layer transferring technique; microwave energy; microwave hybrid; microwave irradiation; nonthermal approach; silicon on insulator materials; wafer bonding; Electromagnetic heating; Silicon; Silicon on insulator technology; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, IEEE International 2002
Print_ISBN :
0-7803-7439-8
Type :
conf
DOI :
10.1109/SOI.2002.1044471
Filename :
1044471
Link To Document :
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