The effects of rapid annealing and passivation of co-sputtered erbium doped sirich oxide/SiO2 superlattice structures

Author

Samson, T.H.S. ; Chen, Rui ; Vu, Q.V. ; Pita, K. ; Sun, H.D. ; Yu, M.B.

Author_Institution

Photonics Res. Centre, Nanyang Technol. Univ., Singapore, Singapore

fYear

2010

fDate

14-16 Dec. 2010

Firstpage

1

Lastpage

5

Abstract

Erbium doped Si-rich oxide/SiO₂ (Er:SRO/SiO₂) superlattice structures have been deposited using rf magnetron co-sputtering technique. Rapid annealing treatment with and without passivation (annealing in 5%H₂:N₂ at 500°C for 1 hour) were carried out. The optimum annealing temperature for un-passivated and passivated samples is 850°C and 1000°C, respectively. Excitation mechanism of Er is through defects or excitons. Passivation enhanced the Si nanocrystals-mediated-Er photoluminescence (PL) at 1.55 μm quenching the competing non-radiative recombination centers. The passivation also quenched the defect-mediated Er emission. The PL peak intensity of Er emission varied with Si nanocrystal size and the optimum size is ~3.5 nm.

Keywords

annealing; erbium; excitons; nanofabrication; nanostructured materials; passivation; photoluminescence; quenching (thermal); silicon compounds; sputter deposition; superlattices; SiO₂:Er-SiO₂; annealing temperature; cosputtered superlattice structures; defect-mediated emission; excitation mechanism; excitons; nanocrystal size; nanocrystal-mediated-Er photoluminescence; nonradiative recombination centers; passivation; photoluminescence peak intensity; quenching; rapid annealing treatment; rf magnetron cosputtering technique; temperature 1000 degC; temperature 500 degC; temperature 850 degC; time 1 hour; Annealing; Erbium; Nanocrystals; Passivation; Silicon; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics Global Conference (PGC), 2010

Conference_Location

Singapore

Print_ISBN

978-1-4244-9882-6

Type

conf

DOI

10.1109/PGC.2010.5706085

Filename

5706085