• DocumentCode
    2407001
  • Title

    SOI uniformity and surface smoothness improvement using GCIB processing

  • Author

    Allen, L.P. ; Caliendo, S. ; Hofmeester, N. ; Harrington, E. ; Walsh, M. ; Tabat, M. ; Tetreault, T.G. ; Degenkolb, E. ; Santeufemio, C.

  • Author_Institution
    Epion Corp., Billerica, MA, USA
  • fYear
    2002
  • fDate
    7-10 Oct 2002
  • Firstpage
    192
  • Lastpage
    193
  • Abstract
    This paper investigates the use of gas cluster ion beam (GCIB) processing on SOI substrates for reducing the high frequency surface roughness of the starting material while improving the wafer uniformity. AFM images and power spectral density measurements of the pre- and post-GCIB surfaces are examined to determine the spatial-frequency range of the surface features most affected by the gas clusters.
  • Keywords
    X-ray photoelectron spectra; atomic force microscopy; elemental semiconductors; ellipsometry; ion beam effects; silicon; silicon-on-insulator; surface topography; surface treatment; AFM images; GCIB processing; SOI substrates; SOI uniformity; Si; Si-SiO2; SiO2; XPS; ellipsometry; gas cluster ion beam processing; high frequency surface roughness; power spectral density; spatial-frequency range; surface smoothness improvement; wafer uniformity; Atomic force microscopy; Ellipsometry; Ion radiation effects; Silicon; Silicon on insulator technology; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, IEEE International 2002
  • Print_ISBN
    0-7803-7439-8
  • Type

    conf

  • DOI
    10.1109/SOI.2002.1044472
  • Filename
    1044472
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2407001