Title :
SOI uniformity and surface smoothness improvement using GCIB processing
Author :
Allen, L.P. ; Caliendo, S. ; Hofmeester, N. ; Harrington, E. ; Walsh, M. ; Tabat, M. ; Tetreault, T.G. ; Degenkolb, E. ; Santeufemio, C.
Author_Institution :
Epion Corp., Billerica, MA, USA
Abstract :
This paper investigates the use of gas cluster ion beam (GCIB) processing on SOI substrates for reducing the high frequency surface roughness of the starting material while improving the wafer uniformity. AFM images and power spectral density measurements of the pre- and post-GCIB surfaces are examined to determine the spatial-frequency range of the surface features most affected by the gas clusters.
Keywords :
X-ray photoelectron spectra; atomic force microscopy; elemental semiconductors; ellipsometry; ion beam effects; silicon; silicon-on-insulator; surface topography; surface treatment; AFM images; GCIB processing; SOI substrates; SOI uniformity; Si; Si-SiO2; SiO2; XPS; ellipsometry; gas cluster ion beam processing; high frequency surface roughness; power spectral density; spatial-frequency range; surface smoothness improvement; wafer uniformity; Atomic force microscopy; Ellipsometry; Ion radiation effects; Silicon; Silicon on insulator technology; Surface treatment;
Conference_Titel :
SOI Conference, IEEE International 2002
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.2002.1044472
