• DocumentCode
    2407044
  • Title

    An impact ionization model for SOI circuit simulation [MOSFETs]

  • Author

    Su, P. ; Fung, S.K.H. ; Wan, H. ; Niknejad, A. ; Chan, M. ; Hu, C.

  • Author_Institution
    Dept. of EECS, California Univ., Berkeley, CA, USA
  • fYear
    2002
  • fDate
    7-10 Oct 2002
  • Firstpage
    201
  • Lastpage
    202
  • Abstract
    The authors previously reported a thermal activation view for low voltage impact ionization in MOSFETs. In this paper, a compact model is developed based on the thermal activation energy theory to capture the SOI device characteristics with both thermally assisted impact ionization and electric field induced impact ionization accounted for.
  • Keywords
    MOSFET; elemental semiconductors; impact ionisation; semiconductor device models; silicon; silicon-on-insulator; MOSFETs; SOI circuit simulation; SOI device characteristics; Si-SiO2; electric field induced impact ionization; impact ionization model; low voltage impact ionization; thermal activation energy; thermally assisted impact ionization; Impact ionization; MOSFETs; Semiconductor device modeling; Silicon; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, IEEE International 2002
  • Print_ISBN
    0-7803-7439-8
  • Type

    conf

  • DOI
    10.1109/SOI.2002.1044475
  • Filename
    1044475
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2407044