Title :
An impact ionization model for SOI circuit simulation [MOSFETs]
Author :
Su, P. ; Fung, S.K.H. ; Wan, H. ; Niknejad, A. ; Chan, M. ; Hu, C.
Author_Institution :
Dept. of EECS, California Univ., Berkeley, CA, USA
Abstract :
The authors previously reported a thermal activation view for low voltage impact ionization in MOSFETs. In this paper, a compact model is developed based on the thermal activation energy theory to capture the SOI device characteristics with both thermally assisted impact ionization and electric field induced impact ionization accounted for.
Keywords :
MOSFET; elemental semiconductors; impact ionisation; semiconductor device models; silicon; silicon-on-insulator; MOSFETs; SOI circuit simulation; SOI device characteristics; Si-SiO2; electric field induced impact ionization; impact ionization model; low voltage impact ionization; thermal activation energy; thermally assisted impact ionization; Impact ionization; MOSFETs; Semiconductor device modeling; Silicon; Silicon on insulator technology;
Conference_Titel :
SOI Conference, IEEE International 2002
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.2002.1044475
