DocumentCode
2407072
Title
Study of reverse dark current in silicon APD for PET application
Author
Ning, Duan ; Liow, Tsung-Yang ; Lo, Guo-Qiang
Author_Institution
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
fYear
2010
fDate
14-16 Dec. 2010
Firstpage
1
Lastpage
4
Abstract
This paper demonstrates silicon APD with low dark current for Positron emission tomography (PET) application. The origin of dark current has been studied by measuring dark current at different temperature and different bias. It is shown that dark current of the silicon APD originates from the field assisted band-trap-band tunneling.
Keywords
avalanche photodiodes; biomedical electronics; dark conductivity; elemental semiconductors; positron emission tomography; silicon; tunnelling; PET Application; Si; field assisted band-trap-band tunneling; positron emission tomography; reverse dark current; silicon APD; Current measurement; Dark current; Electric fields; Fabrication; Positron emission tomography; Silicon; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Global Conference (PGC), 2010
Conference_Location
Singapore
Print_ISBN
978-1-4244-9882-6
Type
conf
DOI
10.1109/PGC.2010.5706089
Filename
5706089
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