Optical crosstalk reduction using a HR-si substrate with trap-rich passivation layer

Author

Roda Neve, C. ; Lederer, D. ; Raskin, Jean-Pierre

Author_Institution

Microwave Lab., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium

fYear

2007

fDate

9-12 Oct. 2007

Firstpage

592

Lastpage

595

Abstract

The efficiency of a coplanar waveguide photo- induced Radio Frequency switch on a High Resistivity Silicon substrate is presented. Experimental results from 40 MHz to 40 GHz demonstrate the important reduction of transmission line losses and optical crosstalk obtained by introducing a trap-rich passivation layer (crystallized amorphous silicon) at the interface between the high resistivity silicon substrate and the field oxide.

Keywords

amorphous semiconductors; coplanar waveguide components; integrated optoelectronics; millimetre wave devices; optical crosstalk; optical interconnections; optical switches; passivation; silicon; transmission lines; Si; crystallized amorphous silicon; frequency 40 MHz to 40 GHz; high resistivity silicon substrate; optical crosstalk reduction; transmission line losses; trap-rich passivation layer; Charge carrier processes; Conductivity; Coplanar transmission lines; Coplanar waveguides; Optical crosstalk; Optical switches; Optical waveguides; Passivation; Radio frequency; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-001-9

Type

conf

DOI

10.1109/EUMC.2007.4405260

Filename

4405260

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2407485