Title :
Optical crosstalk reduction using a HR-si substrate with trap-rich passivation layer
Author :
Roda Neve, C. ; Lederer, D. ; Raskin, Jean-Pierre
Author_Institution :
Microwave Lab., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
Abstract :
The efficiency of a coplanar waveguide photo- induced Radio Frequency switch on a High Resistivity Silicon substrate is presented. Experimental results from 40 MHz to 40 GHz demonstrate the important reduction of transmission line losses and optical crosstalk obtained by introducing a trap-rich passivation layer (crystallized amorphous silicon) at the interface between the high resistivity silicon substrate and the field oxide.
Keywords :
amorphous semiconductors; coplanar waveguide components; integrated optoelectronics; millimetre wave devices; optical crosstalk; optical interconnections; optical switches; passivation; silicon; transmission lines; Si; crystallized amorphous silicon; frequency 40 MHz to 40 GHz; high resistivity silicon substrate; optical crosstalk reduction; transmission line losses; trap-rich passivation layer; Charge carrier processes; Conductivity; Coplanar transmission lines; Coplanar waveguides; Optical crosstalk; Optical switches; Optical waveguides; Passivation; Radio frequency; Silicon;
Conference_Titel :
Microwave Conference, 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-001-9
DOI :
10.1109/EUMC.2007.4405260
