DocumentCode :
2407729
Title :
Complex M-spotty byte error control codes
Author :
Suzuki, Kazuyoshi ; Kashiyama, Toshihiko ; Fujiwara, Eiji
Author_Institution :
Graduate Sch. of Inf. Sci. & Eng., Tokyo Inst. of Technol., Japan
fYear :
2005
fDate :
29 Aug.-1 Sept. 2005
Abstract :
Spotty byte error control codes are very effective for correcting/detecting errors in semiconductor memory systems using recent high-density RAM chips with wide I/O data, e.g. 8, 16, or 32 bits. A spotty byte error is defined as t-bit errors within a byte of length b-bit, where 1 ≤ t ≤ b, and denoted as t/b-error. This paper proposes a new error model of two spotty byte errors occurred simultaneously, i.e., t/b-error and t´/b-error, where t ≠ t´, called complex spotty byte errors. This paper presents two complex m-spotty byte error control codes, i.e., (Stb/EC-(Stb/+Sb/)ED) codes which correct all single t/b-errors and detect both t/b-errors and t´/b-errors simultaneously, and ((Stb/+Sb/)EC) codes which correct both single t/b-errors and single t´/b-errors simultaneously. This paper also presents practical examples of the codes with parameter t´ = 1, that is, Stb/EC-(Stb/+S)ED codes and (Stb/+S) EC codes which require smaller check-bit length than the existing Stb/EC-Dtb/ED codes and the Dtb/EC codes, respectively.
Keywords :
error correction codes; error detection codes; check-bit length; complex M-spotty byte error control codes; complex spotty byte errors; error correction codes; high density RAM chips; semiconductor memory systems; t-bit errors; Computer errors; Data engineering; Decoding; Electromagnetic scattering; Error correction; Error correction codes; Information science; Read-write memory; Semiconductor memory; Sufficient conditions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Information Theory Workshop, 2005 IEEE
Print_ISBN :
0-7803-9480-1
Type :
conf
DOI :
10.1109/ITW.2005.1531890
Filename :
1531890
Link To Document :
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