Electrical & optical properties of Mg-doped narrow band-gap InSbN p-n junction

Author

Chen, X.Z. ; Zhang, D.H. ; Jin, Y.J. ; Zhang, Sam

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ. of Singapore, Singapore, Singapore

fYear

2010

fDate

14-16 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

InSbN p-n junctions are fabricated by direct implantation of N⁺ and Mg⁺ into InSb wafers and their electrical and optical properties are characterized. It is found that high quality p-n junctions can be formed and they can absorb photons to form photocurrent. Furthermore, the peak and cut-off wavelengths absorbed can be controlled by monitoring the incorporated nitrogen and the measured peak wavelengths are consistent with the band gaps of the alloys calculated using a 10-band k·p model based on In-N bond.

Keywords

III-V semiconductors; energy gap; indium compounds; ion implantation; k.p calculations; magnesium; narrow band gap semiconductors; p-n junctions; photoconductivity; photodiodes; 10-band k·p model; InSbN:Mg; band gap; cut-off wavelengths; direct implantation; electrical properties; narrow band-gap p-n junction; optical properties; peak wavelengths; photocurrent; photodiode; Current measurement; Metals; Nitrogen; P-n junctions; Photoconductivity; Photodiodes; Photonic band gap;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics Global Conference (PGC), 2010

Conference_Location

Singapore

Print_ISBN

978-1-4244-9882-6

Type

conf

DOI

10.1109/PGC.2010.5706124

Filename

5706124