Integrated Cu-based TM-pass polarizer using CMOS technology platform

Author

Tien, K.N. ; Zahed, M.K. ; Boon, S.O.

Author_Institution

Div. of Phys. Sci. & Eng., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia

fYear

2010

fDate

14-16 Dec. 2010

Firstpage

1

Lastpage

3

Abstract

A transverse-magnetic-pass (TM-pass) copper (Cu) polarizer is proposed and analyzed using the previously published two-dimensional Method-of-Lines beam-propagation model. The proposed polarizer exhibits a simulated high-pass filter characteristics, with TM₀ and TE₀ mode transmissivity of >;70% and <;5%, respectively, in the wavelength regime of 1.2-1.6 μm. The polarization extinction ratio (PER) given by 10 log₁₀ (PTM₀)/(PTE₀) is +11.5 dB across the high-pass wavelength regime. To the best of the authors´ knowledge, we report here the smallest footprint CMOS-platform compatible TM-polarizer.

Keywords

CMOS integrated circuits; copper; elemental semiconductors; integrated optics; light polarisation; method of lines; optical filters; optical polarisers; semiconductor-metal boundaries; silicon; CMOS technology; Si-Cu-Si; TE₀ mode transmissivity; TM₀ mode transmissivity; polarization extinction ratio; transverse-magnetic-pass copper polarizer; two-dimensional method-of-lines beam-propagation model; Copper; Integrated optics; Optical filters; Optical imaging; Optical polarization; Optical sensors; Optical waveguides;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics Global Conference (PGC), 2010

Conference_Location

Singapore

Print_ISBN

978-1-4244-9882-6

Type

conf

DOI

10.1109/PGC.2010.5706134

Filename

5706134