Title :
Effect of porosity on the optical properties of anodized porous silicon thin films
Author :
Riley, D.W. ; Gerhardt, R.A.
Author_Institution :
Sch. of Mater. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
A systematic approach to the study of porous silicon (PS) films is presented in this paper. The study relates the effect of the anodization parameters on the index of refraction, the integrated reflectance, and thus, the porosity of the film. For a single layered film, the results show that the index of refraction decreases with increasing current density and anodization time. Both the film thickness and porosity are directly proportional to the current density applied and they increase with increasing anodization time
Keywords :
anodised layers; elemental semiconductors; porosity; porous semiconductors; reflectivity; refractive index; semiconductor thin films; silicon; Si; anodization; current density; index of refraction; integrated reflectance; optical properties; porosity; porous silicon thin film; Current density; Materials science and technology; Mechanical factors; Optical films; Optical refraction; Reflectivity; Semiconductor films; Semiconductor thin films; Silicon; Thickness measurement;
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1998. Annual Report. Conference on
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-5035-9
DOI :
10.1109/CEIDP.1998.733952