Title :
Modeling and simulation of thin film decoupling capacitors
Author :
Chen, K.Y. ; Brown, W.D. ; Schaper, L.W.
Author_Institution :
Dept. of Electr. Eng., Arkansas Univ., Fayetteville, AR, USA
Abstract :
Thin film decoupling capacitors with a novel structure were modeled and their performance simulated. The influences of contact configurations and dielectric and metal layer thicknesses on the impedance behaviour were studied. Simulation shows that thin film capacitors have excellent high frequency properties
Keywords :
dielectric thin films; electric impedance; electrical contacts; electronic engineering computing; metallisation; microwave devices; thin film capacitors; contact configuration; dielectric layer thickness; high frequency properties; impedance behaviour; metal layer thickness; modeling; performance simulation; simulation; thin film capacitors; thin film decoupling capacitor structure; thin film decoupling capacitors; Capacitors; Contacts; Dielectric measurements; Dielectric thin films; Frequency; Impedance measurement; Inductance; Printed circuits; Thin film circuits; Transistors;
Conference_Titel :
Electrical Performance of Electronic Packaging, 1998. IEEE 7th Topical Meeting on
Conference_Location :
West Point, NY
Print_ISBN :
0-7803-4965-2
DOI :
10.1109/EPEP.1998.733978
