DocumentCode
2408697
Title
Modeling and simulation of thin film decoupling capacitors
Author
Chen, K.Y. ; Brown, W.D. ; Schaper, L.W.
Author_Institution
Dept. of Electr. Eng., Arkansas Univ., Fayetteville, AR, USA
fYear
1998
fDate
26-28 Oct 1998
Firstpage
205
Lastpage
208
Abstract
Thin film decoupling capacitors with a novel structure were modeled and their performance simulated. The influences of contact configurations and dielectric and metal layer thicknesses on the impedance behaviour were studied. Simulation shows that thin film capacitors have excellent high frequency properties
Keywords
dielectric thin films; electric impedance; electrical contacts; electronic engineering computing; metallisation; microwave devices; thin film capacitors; contact configuration; dielectric layer thickness; high frequency properties; impedance behaviour; metal layer thickness; modeling; performance simulation; simulation; thin film capacitors; thin film decoupling capacitor structure; thin film decoupling capacitors; Capacitors; Contacts; Dielectric measurements; Dielectric thin films; Frequency; Impedance measurement; Inductance; Printed circuits; Thin film circuits; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Performance of Electronic Packaging, 1998. IEEE 7th Topical Meeting on
Conference_Location
West Point, NY
Print_ISBN
0-7803-4965-2
Type
conf
DOI
10.1109/EPEP.1998.733978
Filename
733978
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