Comparative study of TaN-TiN and TiN gate stacks for thermally stable PFETs

Author

Ramaswamy, Nirmal ; McTeer, Allen ; Ananthan, Venkat ; Palaniappan, Nanda ; Owens, Tim ; Tang, Sanh ; Iyer, Ravi ; Wang, Shixin ; Mouli, Chandra

Author_Institution

R&D Process Dev., Micron Technol. Inc., Boise, ID

fYear

0

fDate

0-0 0

Lastpage

54

Abstract

Thermally stable TiN and TaN-TiN laminate metal gates for PFETs are demonstrated using a conventional CMOS process flow with SiON gate dielectric. TaN-TiN laminate gates show enhanced drives (I_D), higher transconductance (G_M), higher mobility (mu _EFF, and reduced off current (I_OFF) characteristics compared to TiN gates. The optimum thickness of TaN in the laminate stack is discussed. The as-deposited work function of the TaN-TiN laminate gate stack and TiN was found to be ~ 5.0eV

Keywords

MOSFET; dielectric materials; silicon compounds; tantalum compounds; titanium compounds; work function; CMOS process flow; SiON; TaN-TiN; gate dielectric; gate stacks; laminate metal gate; laminate metal gates; metal nitride; thermally stable PFET; work function; Dielectrics; Electrodes; Inorganic materials; Laminates; Nonhomogeneous media; Optical films; Thermal stability; Tin; Voltage; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Electron Devices, 2006. WMED '06. 2006 IEEE Workshop on

Conference_Location

Boise, ID

Print_ISBN

1-4244-0374-X

Type

conf

DOI

10.1109/WMED.2006.1678306

Filename

1678306