Dependence of Si/sub 3/N/sub 4/ film properties on precursor chemistry

Author

Gonzalez, Fernando ; Surthi, Shyam ; Banerjee, Parag

Author_Institution

Micron Technol. Inc., Boise, ID

fYear

0

fDate

0-0 0

Lastpage

56

Abstract

Silicon nitride films are used as oxidation barriers, mobile ion barriers, hard masks and capacitor dielectrics in integrated circuit manufacturing. Properties of silicon nitride layers are characterized relative to physical, optical, chemical and electrical aspects that pertain to specific applications. The process integration of silicon nitride within a device structure depends upon uniformity and controllability of the deposition conditions. Precursors used in the silicon nitride deposition reaction will affect stoichiometry and reaction rates. The trisilylamine (TSA) precursor is compared to standard dichlorosilane (DCS) in terms of performance parameters

Keywords

dielectric thin films; integrated circuit manufacture; oxidation; silicon compounds; stoichiometry; Si₃N₄; capacitor dielectrics; deposition conditions; hard masks; integrated circuit manufacturing; mobile ion barriers; oxidation barriers; precursor chemistry; reaction rates; silicon nitride films; silicon nitride layers; standard dichlorosilane; stoichiometry; trisilylamine precursor; Capacitors; Chemicals; Chemistry; Dielectrics; Integrated circuit manufacture; Optical films; Oxidation; Particle beam optics; Semiconductor films; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Electron Devices, 2006. WMED '06. 2006 IEEE Workshop on

Conference_Location

Boise, ID

Print_ISBN

1-4244-0374-X

Type

conf

DOI

10.1109/WMED.2006.1678307

Filename

1678307