Photo sensitivities in a 0.35/spl mu/m 18V PDMOS technology

Author

Williams, Brett ; Thomason, Mike ; Belisle, Chuck

Author_Institution

AMI Semicond., Inc., Pocatello, ID

fYear

0

fDate

0-0 0

Lastpage

58

Abstract

The I3T25 technology being developed at AMI Semiconductor, Inc. uses lateral extended-drain MOS transistors (DMOS) (Moscatelli et al., 2000) in a 0.35mum base technology. These devices are very sensitive to the well and field implant critical dimensions (CDs) and the layer-to-layer alignment (overlay). This sensitivity is much greater than the standard CMOS devices. The photoresist used on the P-channel field implant (PFLD) mask has a strong dependence on reticle transmission (RT) and has caused variability in the P-channel DMOS performance

Keywords

MOSFET; photoresists; reticles; 0.35 micron; 18 V; I3T25 technology; P-channel DMOS; P-channel field implant mask; PDMOS technology; RESURF; extended drain MOSFET; field implant critical dimensions; layer-to-layer alignment; photo sensitivities; photomasks; photoresist; reticle transmission; smart power integrated circuits; Ambient intelligence; CMOS technology; Implants; Isolation technology; MOSFET circuits; Medium voltage; Power MOSFET; Power integrated circuits; Resists; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Electron Devices, 2006. WMED '06. 2006 IEEE Workshop on

Conference_Location

Boise, ID

Print_ISBN

1-4244-0374-X

Type

conf

DOI

10.1109/WMED.2006.1678308

Filename

1678308