DocumentCode
2408787
Title
Self-Aligned Carbon Nanotubes for Field Emission Tip with Simple Process
Author
Eom, Bose ; Han, Changho ; Kim, Hyeoncheol ; Yum, Minhyung ; Yang, Jihun ; Park, Chongyun ; Chun, Kukjin
Author_Institution
Dept. of Electr. Eng., Seoul Nat. Univ., South Korea
fYear
2006
fDate
10-11 Oct. 2006
Firstpage
497
Lastpage
499
Abstract
Carbon nanotubes (CNTs) is one of the most attractive materials for field emission tip. Because of its low threshold voltage and high current density. In this article we introduce a new simple process to fabricate self-aligned carbon nanotubes for field emission tip with simple process. We can make the less than 200nm diameter hole with our one mask like process by which carbon nanotubes will be self-aligned with the gate layer. And then carbon nanotubes will be catalytically grown in PECVD chamber.
Keywords
carbon nanotubes; current density; field emission; nanotube devices; plasma CVD; PECVD chamber; current density; field emission tip; gate layer; self-aligned carbon nanotubes; threshold voltage; Buffer layers; Carbon nanotubes; Chemical lasers; Dielectrics; Electron beams; Lithography; Physics; Plasma applications; Plasma chemistry; Plasma properties; PECVD; carbon nanotubes; field emission tip; self-aligned;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Electronics, 2006. ICCE '06. First International Conference on
Conference_Location
Hanoi
Print_ISBN
1-4244-0568-8
Electronic_ISBN
1-4244-0569-6
Type
conf
DOI
10.1109/CCE.2006.350878
Filename
4156529
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