IPFA 2008 table of contents

fYear

2008

fDate

7-11 July 2008

Firstpage

1

Lastpage

6

Abstract

The following topics are dealt with: high-performance CMOS; advanced IC packaging; IC package reliability evaluation novel ESD device structure; BEOL metallization reliability; device package failure analysis; silicon nMOSFET characterisation; silicon pMOSFET characterisation; multisource/drain SOI MOSFET simulation; solar cells; memory cells; semiconductors physical characterization; semiconductors chemical characterization; advanced low-k interconnects; passive RFID tags; and nanowire FinFET hot carrier degradation.

Keywords

CMOS integrated circuits; MOSFET; electronics industry; failure analysis; integrated circuit design; integrated circuit metallisation; integrated circuit packaging; integrated circuit reliability; integrated circuit testing; integrated memory circuits; low-k dielectric thin films; nanoelectronics; radiofrequency identification; semiconductor device metallisation; semiconductor device packaging; semiconductor device reliability; semiconductor device testing; silicon; silicon-on-insulator; solar cells; BEOL metallization reliability; IC package reliability evaluation; advanced IC packaging; advanced low-k interconnects; device package failure analysis; high-performance CMOS; memory cells; multisource/drain SOI MOSFET simulation; nanowire FinFET hot carrier degradation; novel ESD device structure; passive RFID tags; semiconductors chemical characterization; semiconductors physical characterization; silicon nMOSFET characterisation; silicon pMOSFET characterisation; solar cells; Dielectrics; Failure analysis; Manufacturing; Materials; Microscopy; Reliability; USA Councils;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the

Conference_Location

Singapore

Print_ISBN

978-1-4244-2039-1

Type

conf

DOI

10.1109/IPFA.2008.4588141

Filename

4588141