Title :
A 4 Mbit static RAM
Author_Institution :
SGS-Thomson Microelectron., Grenoble, France
Abstract :
The 4.5-Mb static RAM (random access memory) is discussed. After a brief review of the state of the art, the architecture of the static RAM is presented. The technology add-ons are discussed and test strategy and the configuration algorithms are presented
Keywords :
VLSI; integrated memory circuits; random-access storage; 4.5 Mbit; architecture; configuration algorithms; static RAM; technology add-ons; test strategy; Collaboration; Image storage; Manufacturing industries; Metals industry; Microelectronics; Random access memory; Read-write memory; Telecommunications; Testing; Wafer scale integration;
Conference_Titel :
Wafer Scale Integration, 1989. Proceedings., [1st] International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
0-8186-9901-9
DOI :
10.1109/WAFER.1989.47550
