Title :
The helium ion microscope for high resolution imaging, materials analysis and FA applications
Author :
Thompson, William B. ; Notte, John ; Scipioni, Larry ; Stern, Lewis
Author_Institution :
Carl Zeiss SMT Inc., Peabody, MA
Abstract :
The scanning helium ion microscope (HIM) is capable of sub-nanometer resolution using ion induced secondary electron (SE) mode and back scattered ion (RBI) mode imaging. In addition to its long working distance and sub-nanometer resolution, the helium ion microscope in RBI mode provides contrast that is material Z dependent on a nanometer scale. By the complementary use of charge neutralizing electrons, the helium ion microscope can image dielectric materials at full beam energy and maximum resolution without the need for sample coating. This paper will describe the physics of the subatomic virtual source, the systempsilas ion optics, the types of detectors used, the substrate interactions involved with SE and RBI imaging and the applicability of the helium ion microscope to materials and failure analysis problem solving.
Keywords :
dielectric materials; failure analysis; helium; ion microscopes; ion optics; He; back scattered ion mode imaging; failure analysis; helium ion microscope; high resolution imaging; ion optics; materials analysis; subatomic virtual source; subnanometer resolution; Dielectric materials; Energy resolution; Health information management; Helium; High-resolution imaging; Image analysis; Image resolution; Optical imaging; Optical materials; Scanning electron microscopy;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2039-1
Electronic_ISBN :
978-1-4244-2040-7
DOI :
10.1109/IPFA.2008.4588149