Title :
Near-infrared spectroscopic photon emission microscopy of 0.13 μm silicon nMOSFETs and pMOSFETs
Author :
Tan, SL ; Teo, JKJ ; Toh, KH ; Isakov, D. ; Chan, DSH ; Koh, Ls ; Chua, Cm ; Phang, JCH
Author_Institution :
Centre for Integrated Circuit Failure Anal. & Reliability, Nat. Univ. of Singapore, Singapore
Abstract :
Near-infrared photon emission spectra were obtained from the frontside of silicon nMOSFETs and pMOSFETs with a gate length of 0.13 mum and biased into saturation. These spectra were obtained using a high sensitivity in-lens spectroscopic photon emission microscope. Frontside NIR photon emission spectroscopy are performed on 0.13 mum saturated nMOSFETs and pMOSFETs at different gate and drain bias. The nMOSFETs photon emission spectra obtained are significantly different from some previously reported photon emission spectra. The NIR photon emission spectra of the nMOSFETs and pMOSFETs have similar peaks and suggest that the electric field condition in the channels of the nMOSFETs and pMOSFETs are similar.
Keywords :
MOSFET; photoelectron spectra; semiconductor materials; silicon; electric field condition; frontside NIR photon emission spectroscopy; high sensitivity in-lens spectroscopic photon emission microscope; nMOSFET; near-infrared spectroscopic photon emission microscopy; pMOSFET; size 0.13 mum; Dispersion; Indium gallium arsenide; Lenses; MOSFETs; Optical imaging; Optical microscopy; Optical scattering; Photonic integrated circuits; Silicon; Spectroscopy;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2039-1
Electronic_ISBN :
978-1-4244-2040-7
DOI :
10.1109/IPFA.2008.4588178
