Near-infrared spectroscopic photon emission microscopy of 0.13 μm silicon nMOSFETs and pMOSFETs

Author

Tan, SL ; Teo, JKJ ; Toh, KH ; Isakov, D. ; Chan, DSH ; Koh, Ls ; Chua, Cm ; Phang, JCH

Author_Institution

Centre for Integrated Circuit Failure Anal. & Reliability, Nat. Univ. of Singapore, Singapore

fYear

2008

fDate

7-11 July 2008

Firstpage

1

Lastpage

5

Abstract

Near-infrared photon emission spectra were obtained from the frontside of silicon nMOSFETs and pMOSFETs with a gate length of 0.13 mum and biased into saturation. These spectra were obtained using a high sensitivity in-lens spectroscopic photon emission microscope. Frontside NIR photon emission spectroscopy are performed on 0.13 mum saturated nMOSFETs and pMOSFETs at different gate and drain bias. The nMOSFETs photon emission spectra obtained are significantly different from some previously reported photon emission spectra. The NIR photon emission spectra of the nMOSFETs and pMOSFETs have similar peaks and suggest that the electric field condition in the channels of the nMOSFETs and pMOSFETs are similar.

Keywords

MOSFET; photoelectron spectra; semiconductor materials; silicon; electric field condition; frontside NIR photon emission spectroscopy; high sensitivity in-lens spectroscopic photon emission microscope; nMOSFET; near-infrared spectroscopic photon emission microscopy; pMOSFET; size 0.13 mum; Dispersion; Indium gallium arsenide; Lenses; MOSFETs; Optical imaging; Optical microscopy; Optical scattering; Photonic integrated circuits; Silicon; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the

Conference_Location

Singapore

Print_ISBN

978-1-4244-2039-1

Electronic_ISBN

978-1-4244-2040-7

Type

conf

DOI

10.1109/IPFA.2008.4588178

Filename

4588178