Title :
Linearity and efficiency optimisation in microwave power amplifier design
Author :
Colantonio, P. ; Giannini, F. ; Limiti, E. ; Nanni, A. ; Camarchia, V. ; Teppati, V. ; Pirola, M.
Author_Institution :
Univ. di Roma Tor Vergata, Rome
Abstract :
In this contribution the minimisation of asymmetry between lower and upper side band intermodulation products will be discussed, starting from a Volterra analysis approach. Base-band and harmonic device terminations effects will be analysed, identifying novel conditions minimising IMD asymmetry and IM3 power levels. Such conditions, not relying on base-band terminations, are the basis for IM3 products minimisation via second harmonic load selection. The proposed criterion is then verified by harmonic load-pull measurements on a GaN HEMT under two-tone excitation. Measurements agree with the analysis, demonstrating a null IMD asymmetry and 6 dBc increase in C/I3, without affecting output power (34 dBm @ 1 dB compression) and power added efficiency performance (65% @ 1 dB compression).
Keywords :
III-V semiconductors; Volterra equations; gallium compounds; high electron mobility transistors; microwave field effect transistors; microwave power amplifiers; wide band gap semiconductors; GaN; HEMT; Volterra analysis; asymmetry minimisation; base-band device terminations; efficiency 65 percent; harmonic device terminations; harmonic load-pull measurements; intermodulation products; microwave power amplifier design; second harmonic load selection; Design optimization; Gallium nitride; HEMTs; Harmonic analysis; Linearity; Microwave amplifiers; Microwave devices; Power amplifiers; Power measurement; Power system harmonics;
Conference_Titel :
Microwave Conference, 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-001-9
DOI :
10.1109/EUMC.2007.4405385
