• DocumentCode
    2409960
  • Title

    Stress-induced degradation in strain-engineered nMOSFETs

  • Author

    Maiti, T.K. ; Mahato, S.S. ; Bera, M.K. ; Sengupta, M. ; Chakraborty, P. ; Mahata, C. ; Chakraborty, A. ; Maiti, C.K.

  • Author_Institution
    Dept. of Electron.&ECE, Indian Inst. of Technol., Kharagpur
  • fYear
    2008
  • fDate
    7-11 July 2008
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Effects of electrical stress on DC performance of strain-engineered nMOSFETs are investigated using simulation. The applicability of technology CAD (TCAD) for the prediction of MOSFET reliability is demonstrated.
  • Keywords
    MOSFET; semiconductor device reliability; technology CAD (electronics); MOSFET reliability; TCAD; electrical stress; stress induced degradation; CMOS technology; Capacitive sensors; Degradation; Hot carriers; Hydrogen; Integrated circuit technology; Kinetic theory; MOSFET circuits; Radio frequency; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-2039-1
  • Electronic_ISBN
    978-1-4244-2040-7
  • Type

    conf

  • DOI
    10.1109/IPFA.2008.4588185
  • Filename
    4588185
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2409960