DocumentCode
2409998
Title
Influence of hydrogen annealing on NBTI performance
Author
Jin, L.J. ; Kuan, H.P. ; Sim, D. ; Mukhopadhyay, M.
Author_Institution
Syst. on Silicon Manuf. Co. Pte. Ltd., Singapore
fYear
2008
fDate
7-11 July 2008
Firstpage
1
Lastpage
4
Abstract
The effect of hydrogen annealing after local interconnect layer (LIL) formation and before contact/metal was evaluated with negative bias temperature instability (NBTI), electrical testing and yield in 0.14 mum embedded flash. No significant difference was observed in electrical testing and yield amongst all splits. However, difference was observed from NBTI test. This paper mainly summarizes the influence of hydrogen annealing on NBTI performance.
Keywords
annealing; integrated circuit interconnections; integrated circuit testing; thermal stability; NBTI; electrical testing; hydrogen annealing; local interconnect layer formation; negative bias temperature instability; Annealing; Contacts; Hydrogen; Manufacturing; Negative bias temperature instability; Niobium compounds; Stress; Testing; Titanium compounds; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the
Conference_Location
Singapore
Print_ISBN
978-1-4244-2039-1
Electronic_ISBN
978-1-4244-2040-7
Type
conf
DOI
10.1109/IPFA.2008.4588187
Filename
4588187
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